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Control of Y-211 content in bulk YBCO superconductors fabricated by a buffer-aided, top seeded infiltration and growth melt process

机译:通过缓冲辅助,顶晶浸渗和生长熔融工艺制造的散装YBCO超导体中Y-211含量的控制

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Bulk (RE)-Ba-Cu-O ((RE) BCO, where RE stands for rare-earth), single grain superconductors can trap magnetic fields of several tesla at low temperatures and therefore can function potentially as high field magnets. Although top seeded melt growth (TSMG) is an established process for fabricating relatively high quality single grains of (RE) BCO for high field applications, this technique suffers from inherent problems such as sample shrinkage, a large intrinsic porosity and the presence of (RE)(2)BaCuO5 (RE-211)-free regions in the single grain microstructure. Seeded infiltration and growth (SIG), therefore, has emerged as a practical alternative to TSMG that overcomes many of these problems. Until now, however, the superconducting properties of bulk materials processed by SIG have been inferior to those fabricated using the TSMG technique. In this study, we identify that the inferior properties of SIG processed bulk superconductors are related to the presence of a relatively large Y-211 content (similar to 41.8%) in the single grain microstructure. Controlling the RE-211 content in SIG bulk samples is particularly challenging because it is difficult to regulate the entry of the liquid phase into the solid RE-211 preform during the infiltration process. In an attempt to solve this issue, we have investigated the effect of careful control of both the infiltration temperature and the quantity of liquid phase powder present in the sample preforms prior to processing. We conclude that careful control of the infiltration temperature is the most promising of these two process variables. Using this knowledge, we have fabricated successfully a YBCO bulk single grain using the SIG process of diameter 25 mm that exhibits a trapped field of 0.69 T at 77 K, which is the largest value reported to date for a sample fabricated by the SIG technique.
机译:块状(RE)-Ba-Cu-O((RE)BCO,其中RE代表稀土),单晶粒超导体可以在低温下俘获多个特斯拉的磁场,因此有可能用作高磁场磁体。尽管顶晶种熔体生长(TSMG)是用于高场应用的相对高质量(RE)BCO单晶的成熟工艺,但该技术仍存在固有问题,例如样品收缩,大固有孔隙率和(RE)的存在(2)单晶组织中无BaCuO5(RE-211)的区域。因此,种子渗透和生长(SIG)已经成为克服许多这些问题的TSMG的实用替代品。但是,到目前为止,SIG加工的散装材料的超导性能还不如使用TSMG技术制造的材料。在这项研究中,我们确定了SIG处理的块状超导体的劣质与单晶粒微结构中存在相对较大的Y-211含量(约41.8%)有关。控制SIG块状样品中RE-211的含量尤其具有挑战性,因为在渗透过程中很难控制液相进入固体RE-211预成型坯的过程。为了解决这个问题,我们研究了在处理之前仔细控制样品预制件中的渗透温度和液相粉末的量的效果。我们得出结论,仔细控制渗透温度是这两个过程变量中最有希望的。利用这一知识,我们使用直径为25 mm的SIG工艺成功制造了YBCO散装单晶,在77 K时显示出0.69 T的俘获场,这是迄今为止通过SIG技术制造的样品的最大值。

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