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AN OPTIMIZED SET-UP FOR TOTAL REFLECTION PARTICLE INDUCED X-RAY EMISSION

机译:总反射粒子引起的X射线发射的优化设置

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MeV proton beams at small angles of incidence (0-35 mrad) are used to analyse trace elements on hat surfaces such as Si wafers or quartz substrates. In these experiments, the particle induced X-ray emission (PIXE) signal is used in a new optimized set-up. This set-up is constructed in such a way that the X-ray detector can reach very large solid angles, larger than 1 sr. Use of these large detector solid angles, combined with the reduction of bremsstrahlung background, affords limits of detection (LOD) of the order of 10(10) at cm(-2) using total reflection particle induced X-ray emission (TPIXE). The LODs from earlier TPIXE measurements in a non-optimized set-up are used to estimate LODs in the new TPIXE set-up. Si wafers with low surface concentrations of V, Ni, Cu and Ag are used as standards to calibrate the LODs found with this set-up. The metal concentrations are determined by total reflection X-ray fluorescence (TXRF). The TPIXE measurements are compared with TXRF measurements on the same wafers. (C) 1997 Elsevier Science B.V. [References: 14]
机译:MeV质子束以小入射角(0-35 mrad)用于分析帽子表面上的痕量元素,例如Si晶片或石英衬底。在这些实验中,粒子诱导的X射线发射(PIXE)信号用于新的优化设置中。这种设置的方式使得X射线探测器可以达到非常大的立体角,大于1 sr。使用这些较大的探测器立体角并结合减少致辐射本底,使用全反射粒子诱导的X射线发射(TPIXE),可以在cm(-2)处提供10(10)量级的检测极限(LOD)。来自非优化设置中较早TPIXE测量的LOD用于估计新TPIXE设置中的LOD。具有低表面浓度的V,Ni,Cu和Ag的Si晶片被用作标准品,以校准此设置中发现的LOD。通过全反射X射线荧光(TXRF)确定金属浓度。将TPIXE测量值与相同晶片上的TXRF测量值进行比较。 (C)1997 Elsevier Science B.V. [参考:14]

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