On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

摘要

Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p~(22)D-3s~24p~2P°, 3s~23d~2D-3s~24f~2F°, and 3s~24p~2P°-3s~24d~2D transitions, the Si III line intensity ratios in the 3s3d~3D-3s4p~3P°, 3s4p~3P°-3s4d~3D, 3s4p~3P°-3s5s~3S, 3s4s~3S-3s4p~3P°, and 3s4f~3F°-3s5g~3G transitions, and the Si IV line intensity ratios in the 4p~2P°-4d~2D and 4p~2P°-5s~2S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.