...
首页> 外文期刊>Spectrochimica Acta, Part B. Atomic Spectroscopy >Low Z total reflection X-ray fluorescence analysis - challenges and answers
【24h】

Low Z total reflection X-ray fluorescence analysis - challenges and answers

机译:低Z全反射X射线荧光分析-挑战和答案

获取原文
获取原文并翻译 | 示例

摘要

Low Z elements, like C, O, ... Al are difficult to measure, due to the lack of suitable low-energy photons for efficient excitation using standard X-ray tubes, as well as difficult to detect with an energy dispersive detector, if the entrance window is not thin enough. Special excitation sources and special energy dispersive detectors are required to increase the sensitivity and to increase the detected fluorescence signal and so to improve the detection limits. Synchrotron radiation, due to its features like high intensity and wide spectral range covering also the low-energy region, is the ideal source for TXRF, especially of low-Z elements. Experiments at a specific beamline (BL 3-4) at SSRL, Stanford, designed for the exclusive use of low-energy photons has been used as an excitation source. Detection limits < 100 fg for Al, Mg and Na have been achieved using quasimonochromatic radiation of 1.7 keV. A Ge(HP) detector with an ultra-thin NORWAR entrance window is used. One application is the determination of low-Z surface contamination on Si-wafers. Sodium, as well as Al, are elements of interest for the semiconductor industry, both influencing the yield of ICs negatively. A detection capacity of 10~(10) atoms / cm~2 is required which can be reached using synchrotron radiation as excitation source. Another promising application is the determination of low-Z atoms implanted in Si wafers. Sodium, Mg and Al were implanted in Si-wafers at various depths. From measuring the dependence of the fluorescence signal on the glancing angle, characteristic shapes corresponding to the depth profile and the relevant implantation depth are found. Calculations are compared with measurements. Finally, aerosols sampled on polycarbonate plates in a Battelle impactor were analyzed with LZ-TXRF using multilayer monochromatized Cr-K#alpha# radiation from a 1300-W fine-focus tube for excitation. Results are presented.
机译:低Z元素(例如C,O,...,Al)难以测量,原因是缺少使用标准X射线管进行有效激发所需的合适低能光子,并且难以使用能量色散检测器进行检测,如果入口窗不够薄。需要特殊的激发源和特殊的能量色散检测器以提高灵敏度并增加检测到的荧光信号,从而提高检测限。同步辐射由于其高强度和宽光谱范围(也覆盖低能量区域)等特性而成为TXRF(尤其是低Z元素)的理想来源。斯坦福大学SSRL专门用于低能光子设计的特定光束线(BL 3-4)的实验已用作激发源。使用1.7 keV的准单色辐射已达到Al,Mg和Na的检测限<100 fg。使用具有超薄NORWAR入射窗的Ge(HP)检测器。一种应用是测定硅晶片上的低Z表面污染。钠和铝是半导体行业关注的元素,都对IC的产量产生负面影响。需要使用同步加速器辐射作为激发源才能达到10〜(10)原子/ cm〜2的检测能力。另一个有希望的应用是确定注入到硅晶片中的低Z原子。将钠,镁和铝植入到不同深度的硅晶圆中。通过测量荧光信号对掠射角的依赖性,找到与深度分布和相关的注入深度相对应的特征形状。将计算结果与测量结果进行比较。最后,使用来自1300 W细聚焦管的多层单色Cr-K#alpha#辐射进行激发,使用LZ-TXRF分析在Battelle撞击器中的聚碳酸酯板上采样的气溶胶。显示结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号