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Structure and ionic conductivity of nanoscale gadolinia-doped ceria thin films

机译:纳米氧化g掺杂二氧化铈薄膜的结构和离子电导率

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Nanoscale 20 mol% gadolinia-doped ceria (GDC) thin films were prepared by RF sputtering on single crystal (0001) Al_2O_3 substrates. The films were polycrystalline with columnar grains that were very highly textured along the (111) direction. A moderate amount of lattice strain was observed when the thickness was less than 81 nm, similar to the grain size. Impedance spectroscopy measurements between 300 C and 650 C demonstrated that GDC thin films achieved highest conductivity at 81 nm thickness. The activation energy was ≈ 0.75 eV when thickness was under 81 nm but increased as the thickness increased above 81 nm. Constant conductivity values for all samples as the oxygen partial pressure varied between 10~(- 3) atm and 1 atm demonstrated that the conductivity was predominantly ionic.
机译:通过射频溅射在单晶(0001)Al_2O_3基板上制备了纳米级的20 mol%掺ado氧化铈(GDC)薄膜。膜是多晶的,柱状晶粒沿(111)方向具有很高的织构。当厚度小于81nm时,观察到适度的晶格应变,类似于晶粒尺寸。在300 C至650 C之间的阻抗谱测量结果表明,GDC薄膜在81 nm厚度下实现了最高的电导率。当厚度在81 nm以下时,活化能为≈0.75 eV,但随着厚度在81 nm以上而增加。当氧气分压在10〜(-3)atm和1 atm之间变化时,所有样品的电导率值保持恒定,这表明电导率主要为离子型。

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