Vapor-deposited nanoscale ionic liquid gels as gate insulators for low-voltage high-speed thin film transistors

摘要

Described are materials and methods for fabricating low-voltage MHz ion-gel-gated thin film transistor devices using patternable defect-free ionic liquid gels. Ionic liquid gels made by the initiated chemical vapor deposition methods described herein exhibit a capacitance of about 1 μF cm⁻² at about 1 MHz, and can be as thin as about 20 nm to about 400 nm.