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Electrical transport at low temperatures in dense nanocrystalline Gd-doped ceria

机译:致密纳米晶掺d二氧化铈在低温下的电传输

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摘要

Dense nanocrystalline Ce0.9Gd0.1O2δ (nCGO) with a median grain size of 120 nm was prepared by sparkplasma sintering of nanoscaled powders. The electrical behaviour of nCGO was analysed by impedance spectroscopy and compared with the micro-grained material of the same composition in humidified (H2O or D2O) and dry O2 in the temperature range 25–600 °C. The large volume of grain boundaries in the nanometric material is highly blocking to oxide-ions, the majority charge carriers above 100 °C, such that the impedance response in this range is dominated by the grain-boundary contribution. The much smaller grainboundary resistance of micrometric CGO is attributable to the larger grain size rather than a different grainboundary thickness or conductivity. Proton transport dominates the electrical conductivity of nCGO in wet atmospheres below 100 °C, as demonstrated by the presence of a conductive H+/D+ isotope effect. The absence of a measurable electromotive force in a water-based concentration cell with nCGO as separating membrane and a massively higher resistivity of nCGO samples with a blocked lateral surface both strongly indicate that the proton transport is attributable to surface processes associated with chemisorbed and physisorbed water layers rather than grain-bulk or grain-boundary phenomena. The magnitude of the roomtemperature surface proton conductivity is 4–5 times greater for nanostructured Ce0.9Gd0.1O2δ than the micrometric analogue.
机译:通过纳米粒子粉末的等离子烧结制备了中值晶粒尺寸为120 nm的致密纳米晶Ce0.9Gd0.1O2δ(nCGO)。通过阻抗谱分析了nCGO的电性能,并与温度范围为25–600°C的加湿(H2O或D2O)和干燥O2中相同组成的微细颗粒材料进行了比较。纳米材料中大量的晶界高度阻塞了氧化物离子,高于100°C的大多数电荷载流子,因此该范围内的阻抗响应受晶界贡献的支配。微米级CGO的晶界电阻小得多,这归因于较大的晶粒尺寸,而不是不同的晶界厚度或电导率。质子传输在低于100°C的潮湿环境中主导nCGO的电导率,如存在导电H + / D +同位素效应所证明。在以nCGO为分离膜的水基浓缩池中缺乏可测量的电动势,并且侧面阻滞的nCGO样品的电阻率大大提高,这都强烈表明质子的迁移可归因于与化学吸附和物理吸附水相关的表面过程层,而不是散粒或晶界现象。纳米结构的Ce0.9Gd0.1O2δ的室温表面质子电导率比微米类似物大4-5倍。

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