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Synthesis, structure, physical properties, and electronic structure of KGaSe_2

机译:KGaSe_2的合成,结构,物理性质和电子结构

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The ternary gallium selenide KGaSe_2 has been synthesized by solid-state reactions and good quality crystal has been obtained. KGaSe_2 crystallizes in the monoclinic space group C2/c with cell dimensions of a = 10.878(2) A, b = 10.872(2) A, c = 15.380(3) A, and β = 100.18(3)°. In the structure, adamantane like [Ga_4Se_(10)]~(8-) units are connected by common corners forming two-dimensional [GaSe_2]~- layers which are separated by K~+ cations. KGaSe_2 exhibits congruent-melting behavior at around 965 °C. It is transparent in the range of 0.47—20.0 urn and has a band gap of 2.60(2) eV. From a band structure calculation, KGaSe_2 is a direct-gap semiconductor. The band gap is mainly determined by the [GaSe_2]~- layer.
机译:通过固相反应合成了三元硒化镓KGaSe_2。 KGaSe_2在单斜空间群C2 / c中结晶,其晶胞尺寸为a = 10.878(2)A,b = 10.872(2)A,c = 15.380(3)A和β= 100.18(3)°。在该结构中,像[Ga_4Se_(10)]〜(8-)单元的金刚烷通过形成由K〜+阳离子隔开的二维[GaSe_2]〜-层的公共角连接。 KGaSe_2在965°C左右表现出全同的熔融行为。它在0.47至20.0 um范围内是透明的,带隙为2.60(2)eV。根据能带结构计算,KGaSe_2是直接隙半导体。带隙主要由[GaSe_2]〜-层决定。

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