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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Comparison of conventional and inverted organic photovoltaic devices with controlled illumination area and extraction layers
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Comparison of conventional and inverted organic photovoltaic devices with controlled illumination area and extraction layers

机译:具有受控照射面积和提取层的常规和反向有机光伏器件的比较

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摘要

The impact of device architecture on organic photovoltaic device performance has been problematic to quantify due to extraction layer materials and device testing issues. In particular, published reports have used different pairs of hole and electron extraction layer materials for conventional versus inverted devices. The origins of the large apparent discrepancy in device J-V characteristics become difficult to understand, arising from differences in built-in potentials and in the extraction layers' conductivities that can affect collection of stray current outside of device area. Here, we show that by using an identical pair of hole and electron extraction layers, and by precisely defining illuminated device area with a shadow mask, most of the differences in the performance of conventional and inverted P3HT:PCBM organic photovoltaic devices are eliminated. The remaining difference in short-circuit current density and EQE spectral shape can be explained primarily by the ratio of hole and electron mobility that leads to more efficient carrier extraction in the inverted devices, with a minor contribution from unintentional p-type doping of the active layer that influences the drift field profile. (C) 2015 Elsevier B.V. All rights reserved.
机译:由于提取层材料和器件测试问题,器件体系结构对有机光伏器件性能的影响难以量化。特别地,已公开的报告已经使用了不同的成对的空穴和电子提取层材料对,用于常规器件与倒置器件。由于内置电势和萃取层电导率的差异会影响器件区域以外的杂散电流的收集,因此器件J-V特性的巨大表观差异的根源变得难以理解。在这里,我们表明,通过使用一对相同的空穴和电子提取层,并通过使用荫罩精确地定义照明设备区域,可以消除传统P3HT:PCBM和反向P3HT:PCBM有机光伏设备在性能上的大部分差异。短路电流密度和EQE频谱形状的剩余差异主要可以通过空穴和电子迁移率之比来解释,空穴和电子迁移率之比可导致倒置器件中的载流子提取效率更高,而有源P型掺杂的贡献很小。影响漂移场分布的层。 (C)2015 Elsevier B.V.保留所有权利。

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