Effect of illumination intensity on cell parameters of a silicon solar cell

摘要

The effect of illumination intensity P_(in) on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the IV curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance R_(sh), series resistance R_s, diode ideality factor n and reverse saturation current I_0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15180 mW/cm~2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the IV curves at short circuit and open circuit conditions. Initially R_(sh) increases slightly with P_(in) and then becomes constant at higher P_(in) values. However, R_s, n and I_0 all decrease continuously with P_(in), but the rate of decrease of each of these becomes smaller at higher P_(in) values. Theoretical values of open circuit voltage V_(oc), curve factor CF and efficiency η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.