Impedance spectroscopy characterisation of highly efficient silicon solar cells under different light illumination intensities

摘要

Highly efficient silicon solar cells have been characterised by impedance spectroscopy and current–potential characteristic in the dark and with different illumination intensities. For each illumination the impedance behaviour has been analysed at different applied bias potentials, in the forward and reverse region, comparing the results with the current–potential characteristic. Different cell parameters, as series and parallel resistances, capacitance, diode factor, minority carrier lifetime, acceptor impurities density and depletion layer charge density have been obtained as a function of bias voltage for different light illumination intensities. The effect of light-generated carriers and applied bias in the behaviour of the solar cell under illumination is discussed