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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Optical characterization of In2S3 solar cell buffer layers grown by chemical bath and physical vapor deposition
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Optical characterization of In2S3 solar cell buffer layers grown by chemical bath and physical vapor deposition

机译:化学浴和物理气相沉积生长的In2S3太阳能电池缓冲层的光学表征

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摘要

In this paper, we Study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and cornpositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell. (C) 2008 Elsevier B.V. All rights reserved.
机译:在本文中,我们研究了硫化铟薄膜的光学性质,为获得良好的太阳能电池缓冲层建立了最佳条件。 In2S3缓冲层已通过化学浴沉积(CBD)和热蒸发(PVD)制备。在CBD和PVD In2S3薄膜之间发现了光学行为差异,这可以解释为由于在两种方法制备的薄膜中观察到的结构,形态和角位置差异。所产生的折射率差必须归因于CBD膜的较低密度,这可能与氧气的存在有关。其较高的折射率使PVD膜更适合降低典型CIGS太阳能电池的总反射率。 (C)2008 Elsevier B.V.保留所有权利。

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