The reliability of thermography- and luminescence-based series resistance and saturation current density imaging

摘要

The conventional quantitative evaluation of dark lock-in thermography (DLIT), electroluminescence (EL), and photoluminescence (PL) images of solar cells is based on the model of independent diodes, where each image pixel is assumed to be connected with the terminals by an independent series resistance. In reality, however, the solar cell represents a 2-dimensional resistance-diode network. In this work solar cells containing well-defined spatial distributions of the saturation current density J(01) and also containing J(02)-type and ohmic shunts are modeled for various externally applied biases and illumination conditions realistically as a 2-dimensional resistance-diode network. The resulting local diode voltage distributions are converted into DLIT, EL and PL images, which are further processed by conventional evaluation methods, which rely on the simple model of independent diodes. These are the so-called "Local-IV" method for the DLIT analysis, which may be supported by EL results to obtain series resistance images, and "C-DCR" for the PL analysis. This leads to calculated images of the local effective series resistance R-s and of J(01). Regarding the resulting R-s images, PL shows the expected series resistance distribution and is not affected by the shunt regions. The DLIT-EL R-s images instead yield expected values only in the homogeneous regions, which are not affected by the assumed shunts. DLIT-EL determines higher values of R-s in local shunt regions and lower values around these regions and in spatially extended shunt regions. Regarding the J(01) images both methods again give the expected results if J(01) is distributed homogeneously. However, in the shunted regions, PL suffers from balancing currents within the emitter and DLIT from optical blurring. By comparing local and extended regions of increased J(01) we find that DLIT approximates the expected J(01) value better than PL, which clearly underestimates even extended local maxima offal. For a local current analysis of silicon solar cells we recommend the use of DLIT for the determination of hi images and PL for the determination of R-s images. (C) 2015 Elsevier B.V. All rights reserved.