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SEM analysis and selenization of Cu-In alloy films produced by co-sputtering of metals

机译:金属共溅射制备的Cu-In合金薄膜的SEM分析和硒化

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摘要

Co-sputtered copper-indium (Cu-In) alloy layers were investigated as precursors for CuInSe2 (CIS) formation. Results of scanning electron microscopy (SEM), EDS and X-ray diffraction (XRD) studies reveal the inhomogeneity of the films composition. The films have a rough surface structure with well-defined islands crystallized within the film matrix. The elemental composition of the island-type crystals corresponds to the compound CuIn2 and the composition of the matrix area corresponds to the CulIIn(9) phase. The influence of heating temperature, time and Se pressure on the morphology and composition of films is studied using SEM, XRD and Roman spectroscopies. Thereby optimal technological parameters for the production of single-phase CIS layers are determined.
机译:研究了共溅射铜铟(Cu-In)合金层作为CuInSe2(CIS)形成的前体。扫描电子显微镜(SEM),EDS和X射线衍射(XRD)研究的结果揭示了膜组合物的不均匀性。薄膜具有粗糙的表面结构,在薄膜基质中结晶有明确定义的岛。岛型晶体的元素组成对应于化合物CuIn2,而基质区域的组成对应于CulIIn(9)相。利用SEM,XRD和Roman光谱技术研究了加热温度,时间和Se压力对薄膜形貌和组成的影响。由此确定用于生产单相CIS层的最佳技术参数。

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