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首页> 外文期刊>Small >Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties
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Cl-Doped ZnO Nanowire Arrays on 3D Graphene Foam with Highly Efficient Field Emission and Photocatalytic Properties

机译:具有高效场发射和光催化性能的3D石墨烯泡沫上掺Cl的ZnO纳米线阵列

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摘要

An environmentally friendly, low-cost, and large-scale method is developed for fabrication of Cl-doped ZnO nanowire arrays (NWAs) on 3D graphene foam (Cl-ZnO NWAs/GF), and investigates its applications as a highly efficient field emitter and photocatalyst. The introduction of Cl-dopant in ZnO increases free electrons in the conduction band of ZnO and also leads to the rough surface of ZnO NWAs, which greatly improves the field emission properties of the Cl-ZnO NWAs/GF. The Cl-ZnO NWAs/GF demonstrates a low turn-on field (approximate to 1.6 V mu m(-1)), a high field enhancement factor (approximate to 12844), and excellent field emission stability. Also, the Cl-ZnO NWAs/GF shows high photocatalytic efficiency under UV irradiation, enabling photodegradation of organic dyes such as RhB within approximate to 75 min, with excellent recyclability. The excellent photocatalytic performance of the Cl-ZnO NWAs/GF originates from the highly efficient charge separation efficiency at the heterointerface of Cl-ZnO and GF, as well as improved electron transport efficiency due to the doping of Cl. These results open up new possibilities of using Cl-ZnO and graphene-based hybrid nanostructures for various functional devices.
机译:开发了一种环保,低成本,大规模的方法,用于在3D石墨烯泡沫(Cl-ZnO NWAs / GF)上制造掺Cl的ZnO纳米线阵列(NWA),并研究其作为高效场致发射器的应用和光催化剂。在ZnO中引入Cl掺杂剂会增加ZnO导带中的自由电子,并导致ZnO NWAs的表面粗糙,从而大大改善了Cl-ZnO NWAs / GF的场致发射性能。 Cl-ZnO NWAs / GF表现出低的导通电场(约1.6 Vμm(-1)),高的场增强因子(约12844)和出色的场发射稳定性。另外,Cl-ZnO NWAs / GF在紫外线照射下显示出高的光催化效率,使有机染料(例如RhB)在大约75分钟内发生光降解,具有出色的可回收性。 Cl-ZnO NWAs / GF的优异光催化性能源自Cl-ZnO和GF异质界面处的高效电荷分离效率,以及由于Cl的掺杂而提高的电子传输效率。这些结果为将Cl-ZnO和基于石墨烯的杂化纳米结构用于各种功能器件开辟了新的可能性。

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