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CVD-grown horizontally aligned single-walled carbon nanotubes: Synthesis routes and growth mechanisms

机译:CVD生长的水平排列单壁碳纳米管:合成途径和生长机理

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Single-walled carbon nanotubes (SWCNTs) have attractive electrical and physical properties, which make them very promising for use in various applications. For some applications however, in particular those involving electronics, SWCNTs need to be synthesized with a high degree of control with respect to yield, length, alignment, diameter, and chirality. With this in mind, a great deal of effort is being directed to the precision control of vertically and horizontally aligned nanotubes. In this review the focus is on the latter, horizontally aligned tubes grown by chemical vapor deposition (CVD). The reader is provided with an in-depth review of the established vapor deposition orientation techniques. Detailed discussions on the characterization routes, growth parameters, and growth mechanisms are also provided.
机译:单壁碳纳米管(SWCNT)具有吸引人的电气和物理特性,这使其在各种应用中非常有前途。然而,对于某些应用,特别是涉及电子学的应用,需要在产率,长度,排列,直径和手性方面进行高度控制的情况下合成SWCNT。考虑到这一点,人们将大量精力用于垂直和水平排列的纳米管的精确控制。在这篇评论中,重点是通过化学气相沉积(CVD)生长的后一种水平排列的管。为读者提供了已建立的气相沉积取向技术的深入综述。还提供了有关表征途径,生长参数和生长机理的详细讨论。

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