Thermal Effects on Electron-Phonon Interactions in Silicon Nanostructures

摘要

Raman spectroscopy of silicon nanostructures, recorded using an excitation laser power density of 1.0 kW/cm~2, was employed here to reveal the dominance of thermal effects at temperatures higher than room temperature. The room temperature Raman spectrum showed only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures showed an increase in FWHM and a decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data were analyzed successfully using theoretical Raman line-shapes generated by incorporating the temperature dependence of a phonon dispersion relation. The experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persist, heating effects start dominating at temperatures higher than room temperature.