An Integrated a-Si:H Gate Driver Circuit Design for Large-sized TFT-LCD Applications

摘要

A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (V_(TH)) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the V_(TH) shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60℃).