P-105: Advanced Furnace-Growing Technology to Fabricate Nanowire Type In_2O_3 Film on Gallium Nitride LEDs

摘要

We have developed the method on the enhanced light emission of semiconductors with nanowire type In_2O_3 films. The nanowire type In_2O_3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In_2O_3 film is more than several fold.