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Oxide TFT Driving Transparent AM-OLED

机译:氧化物TFT驱动透明AM-OLED

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摘要

We have fabricated 3.2" QVGA transparent AM-OLED by integrating photo-stable top gate IGZO TFT array and highly transparent OLED, The photo-stability of oxide TFT was investigated under constant gate bias and constant current (CC) stress to explore the possibility of OLED application. After 40 hours CC stress of 10μA with halogen lamp illumination, the ΔV_(th) was just - 0.22 V while that obtained under dark was + 0.1 V. With newly designed OLED cathode and transparent getter we increase OLED transmittance up to 80% with keeping resistance of cathode at 6 Ω/□. Outdoor stability of OLED and oxide TFT make transparent AM-OLED viable in the real market.
机译:我们通过将光稳定的顶栅IGZO TFT阵列和高度透明的OLED集成在一起,制造了3.2英寸QVGA透明AM-OLED。在恒定栅极偏置和恒定电流(CC)应力下研究了氧化物TFT的光稳定性,以探索产生TFT的可能性OLED应用:在卤素灯照明下40小时CC应力为10μA之后,ΔV_(th)仅为-0.22 V,而在暗处获得的ΔV_(th)为+ 0.1 V.使用新设计的OLED阴极和透明吸气剂,我们可以将OLED透射率提高至80阴极电阻保持在6Ω/□的情况下达到%,而OLED和氧化物TFT的室外稳定性使透明AM-OLED在实际市场中可行。

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