Recombination Current Instability in Epitaxial p~+-n Structures with Impurity Atoms Locally Incorporated into the n-type Region and DEtermination of the Deep Center Parameters

摘要

The physical processes causing the recombination current instability in silicon epitaxial p~+-n structures with a local contact formed in the n-type region of the structure and produced by incorporation of impurity atoms that introduced deep energy levels in the silicon band gap were studied. Based on the study of the current instability, the parameters (density, energy position, and cross section of electron capture) of deep-level centers generated by tin, lead, cadmium, and nickel in silicon, were determined.