Production of deep-doped regions of one conductivity type in a semiconductor body with conductivity of the opposite type comprises inserting protons or hydrogen atoms in the direction of the current flow between the electrodes

摘要

Production of deep-doped regions (5) of one conductivity type in a semiconductor body (1) with conductivity of the opposite type having at least two electrodes (2, 3) on opposite-lying surfaces comprises inserting protons or hydrogen atoms to dope the deep-doped regions in the direction of the current flow between the electrodes. Preferred Features: Deep-doped n-conducting regions are produced. A masked proton radiation dose of over 1011 protons cm2 is used. During proton radiation, implantation is carrier out using several energies. Tempering is carried out after proton radiation.