Edge end for a power semiconductor component comprises a semiconductor body, a first region of opposing conductivity type, a second region of a first conductivity type, a region of different conductivity type, and electrodes

摘要

Edge end comprises a semiconductor body (21) having a first conductivity type with two opposing main surfaces (30,31), a first region (22) of opposing conductivity type embedded in the first main surface, a second region (24) of a first conductivity type provided in the first region, a region (23) of different conductivity type provided in the region of the second main surface, a first electrode (6) arranged on the first main surface, and a second electrode (8) on the second main surface. A first zone (17) of different conductivity extends from the edge of the third and/or first region in the semiconductor body. Independent claims are also included for: (1) process for the production of an n-conducting zone, preferably an edge end, in a p-conducting semiconductor body; and (2) diode having a p-conducting semiconductor body.