Internal Ionization Energy in II-VI Compounds

摘要

The dependence of sensitivity of surface-barrier p-Cu_(1.8)S-II-VI heterostructures on the energy of exciting photons or of accelerated monoenergetic electrons was studied. The method of the determination of the mean energy ε of internal ionization for the direct-gap II-VI compounds is suggested, and the ε values are found experimentally. The relationship between ε and the band gap of a semiconductor is found to be expressed as ε = 2.5E_g.