Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons

摘要

Electrical and optical properties of CdS single crystals irradiated with a dose ≥10~(18) cm~(-2) of fast reactor neutrons have been studied. It is established that clusters of defects are formed in irradiated material, and cadmium vacancies are dominant in these clusters. In the case when the defect clusters are decomposed in the course of radiation-stimulated annealing or thermal annealing in the temperature range Φ ≈ (200-400)°C, the crystal lattice becomes enriched with Cd vacancies. It is assumed that subthreshold effects play an important role in formation of defect clusters, and that these effects are related to preferential excitation of the K shells in Cd atoms and their Coulomb ejection from the core of a cluster.