Influence of Tellurium Impurity on the Properties of Ga_(1-x)In_XAs_YSb_(1-Y) (X > 0.22) Solid Solutions

摘要

The influence of tellurium impurity on the electrical properties of Ga_(1-x)In_XAs_YSb_(1-Y) (X = 0.22 and X = 0.24) solid solutions grown by liquid-phase epitaxy from lead-containing solution-melts was studied. Defect healing was shown to take place at low tellurium doping levels (X_(Te)~L < 2 * 10~(-5) at.%) in inhomogeneous highly compensated p-type solid solutions. Thus, it is possible to produce slightly compensated p-type materials with a low density of impurities and structural defects. High doping levels allow production of n-type materials with the electron density n = 10~(17) - 10~(19) cm~(-3). Electroluminescence spectra of n-GaInAsSb/p-GaSb heterostructures are promising for the development of light-emitting diodes with a wavelength λ = 2.0 - 2.5 μm.