An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II-VI multilayer nanostructures

摘要

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser's active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of 0.65 mu m. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of 8.5% are attained for the electron-beam energy of 23 keV.