On Stabilization of the Fermi Level in Ga-Doped PbTe-Based Alloys

摘要

The influence of Ga doping and irradiation with high-energy electrons on the galvanomagnetic effects in n-Pb_(1-x)Ge_xTe:Ga (0.04 approx. x approx. 0.06) was investigated. Transitions to the metal-type conduction wee found to occur both with an increase in the impurity content and as a result of irradiation. It is concluded that the impurity level does not pin the Fermi level. It is demonstrated that gallium doping and electron irradiation are the most effective complementary methods for controlling the electrical properties of alloys.