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Characterisation of PZT thin film micro-actuators using a silicon micro-force sensor

机译:使用硅微力传感器表征PZT薄膜微致动器

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This paper reports on the measurements of displacement and blocking force of piezoelectric micro-cantilevers. The free displacement was studied using a surface profiler and a laser vibrometer. The experimental data were compared with an analytical model which showed that the PZT thin film has a Young's modulus of 110 GPa and a piezoelectric coefficient d(31,f) of 30 pC/N. The blocking force was investigated by means of a micro-machined silicon force sensor based on the silicon piezoresistive effect. The generated force was detected by measuring a change in voltage within a piezoresistors bridge. The sensor was calibrated using a commercial nano-indenter as a force and displacement standard. Application of the method showed that a 700 mu m long micro-cantilever showed a maximum displacement of 800 nm and a blocking force of 0.1 mN at an actuation voltage of 5 V, within experimental error of the theoretical predictions based on the known piezoelectric and elastic properties of the PZT film. (c) 2006 Elsevier B.V All rights reserved.
机译:本文报道了压电微悬臂梁的位移和阻挡力的测量结果。使用表面轮廓仪和激光振动计研究自由位移。将实验数据与分析模型进行比较,分析模型显示PZT薄膜的杨氏模量为110 GPa,压电系数d(31,f)为30 pC / N。通过基于硅压阻效应的微机械硅力传感器研究了阻塞力。通过测量压敏电阻电桥内的电压变化来检测产生的力。使用商用纳米压头作为力和位移标准品对传感器进行校准。该方法的应用表明,一个700μm长的微悬臂梁在5 V的激励电压下显示出800 nm的最大位移和0.1 mN的阻挡力,这在基于已知压电和弹性的理论预测的实验误差之内PZT膜的特性。 (c)2006 Elsevier B.V保留所有权利。

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