The objective of this study is to solve the difficulties encountered during planarization and etching of a polysilicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch. (C) 2003 Elsevier B.V. All rights reserved. [References: 6]
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