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Simultaneous high-Q confinement and selective direct piezoelectric excitation of flexural and extensional lateral vibrations in a silicon phononic crystal slab resonator

机译:硅声子晶体平板谐振器中弯曲和拉伸横向振动的同时高Q约束和选择性直接压电激励

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摘要

The complete phononic band gap (PnBG) of a phononic crystal (PnC) slab is used to efficiently and simultaneously confine both flexural and extensional (longitudinal) elastic vibrations in a resonator. The PnC structure is fabricated by etching a hexagonal (honeycomb) array of air holes in a silicon (Si) slab. Flexural and extensional acoustic modes in the structure are directly excited by a piezoelectric transducer stack fabricated directly on top of the resonant structure to excite the desired modes. Using a frequency sweep analysis, it is shown that the modes of the structure can be selectively excited by modification of the transducer. The fabricated PnC resonator resonates at 120 MHz and 129 MHz, which correspond to a flexural and an extensional mode, respectively. The measured resonance frequencies are in very good compliance with the eigen frequency and frequency sweep finite element analyses. By fitting a Butterworth-Van Dyke model, the electrical characteristics of the resonator in air are extracted. As a result, input impedances of 1200 Ω and 5000 Ω, and quality factors (Qs) of 3600 and 10,000 for the flexural and the extensional modes are obtained, respectively. The Q of 10,000 is, to our knowledge, the largest value reported for any PnC resonator to date.
机译:声子晶体(PnC)平板的完整声子带隙(PnBG)用于有效并同时限制谐振器中的弯曲和拉伸(纵向)弹性振动。通过蚀刻硅(Si)平板中的气孔的六边形(蜂窝)阵列来制造PnC结构。结构中的挠曲和拉伸声模由直接在谐振结构顶部制造的压电换能器叠层直接激发,以激发所需的模态。使用扫频分析显示,可以通过修改换能器选择性地激发结构的模式。制成的PnC谐振器在120 MHz和129 MHz处谐振,分别对应于弯曲模式和拉伸模式。测得的共振频率与本征频率和扫频有限元分析非常吻合。通过拟合Butterworth-Van Dyke模型,可以提取空气中谐振器的电特性。结果,对于弯曲模式和拉伸模式,分别获得了1200Ω和5000Ω的输入阻抗以及3600和10,000的品质因数(Qs)。据我们所知,Q值为10,000,是迄今为止任何PnC谐振器中报告的最大值。

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