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首页> 外文期刊>Scripta materialia >INTERFACE STRUCTURE AND FORMATION MECHANISM OF DIFFUSION-BONDED JOINTS OF SIC CERAMIC TO TiAl-BASED ALLOY
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INTERFACE STRUCTURE AND FORMATION MECHANISM OF DIFFUSION-BONDED JOINTS OF SIC CERAMIC TO TiAl-BASED ALLOY

机译:SiC陶瓷与TiAl基合金扩散结合接头的界面结构及形成机理

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摘要

Diffusion bonding of SiC ceramic to TiAl-based alloy was carried out at 1473-1573 K for 15-240 mm under a pressure of 35 MPa. The kinds of the reaction products and the interface structures of the joints were investigated by SEM, EPMA and XRD. Based on this, a formation mechanism of the interface structure was elucidated.Two kinds of reaction products or new phases have formed during the diffusion bonding of SiC to TAD, namely face-centered cubic TiC and hexagonal Ti_5Si_3Cx. The interface structure of diffusion-bonded SiC/TAD joints is SiC/TiC/(Ti_5Si_3Cx +TiC)/TAD, and this structure will not change with bonding time once it forms.The interface structure of SiC/TAD joints forms according to the three-stage mechanism, namely the occurrence of a single-phase TiC layer; the occurrence of a duplex-phase (Ti_5Si_3Cx +TiC) layer; and the growth of the TiC and (Ti_5Si_3Cx +TiC) layers. In addition, the thickness of each reaction layer Increases with bonding time according to a parabolic law.
机译:SiC陶瓷与TiAl基合金的扩散结合在1473-1573 K压力下进行了15-240 mm,压力为35 MPa。通过SEM,EPMA和XRD研究了反应产物的种类和接头的界面结构。在此基础上,阐明了界面结构的形成机理。在SiC与TAD的扩散键合过程中,形成了两种反应产物或新相,即面心立方TiC和六角形Ti_5Si_3Cx。扩散结合的SiC / TAD接头的界面结构为SiC / TiC /(Ti_5Si_3Cx + TiC)/ TAD,一旦形成,该结构就不会随键合时间而变化.SiC / TAD接头的界面结构根据三种阶段机制,即出现单相TiC层;双相(Ti_5Si_3Cx + TiC)层的出现;以及TiC和(Ti_5Si_3Cx + TiC)层的生长。另外,根据抛物线定律,每个反应层的厚度随键合时间而增加。

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