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首页> 外文期刊>Scripta materialia >Effect of chemical vapor deposition of Si_3N_4, BN and B_4C coatings on the mechanical and dielectric properties of porous Si_3N_4 ceramic
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Effect of chemical vapor deposition of Si_3N_4, BN and B_4C coatings on the mechanical and dielectric properties of porous Si_3N_4 ceramic

机译:Si_3N_4,BN和B_4C涂层的化学气相沉积对多孔Si_3N_4陶瓷力学和介电性能的影响

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摘要

The mechanical properties of porous Si_3N_4 ceramic are noticeably improved after chemical vapor deposition (CVD) of Si_3N_4, BN and B_4C coatings. The dielectric constant and loss of porous Si_3N_4 ceramic remain almost unchanged after CVD of BN, increase slightly after CVD of Si_3N_4, but increase greatly after CVD of B_4C. Overall, CVD of Si_3N_4 performs better than CVD of BN and B_4C in improving the mechanical properties and keeping the low dielectric constant and loss of porous Si_3N_4 ceramic.
机译:在对Si_3N_4,BN和B_4C涂层进行化学气相沉积(CVD)之后,多孔Si_3N_4陶瓷的机械性能得到明显改善。 BN CVD后,多孔Si_3N_4陶瓷的介电常数和损耗几乎保持不变,而Si_3N_4 CVD后的介电常数和损耗几乎增加,而B_4C CVD之后的介电常数和损耗却大大增加。总体而言,Si_3N_4的CVD在改善机械性能,保持低介电常数和降低多孔Si_3N_4陶瓷的损耗方面比BN和B_4C的CVD性能更好。

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