Advantages of Si_xSb_2Te phase-change material and its applications in phase-change random access memory

摘要

Si-doped Sb_2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si_(0.53)Sb_2Te needs a lower phase-change operating voltage than Ge_2Sb_2Te_5. For the storage of data for 10 years, Si_(0.53)Sb_2Te needs an annealing temperature that is about 24 °C higher than for Ge_2Sb_2Te_5.