Anomalous current-voltage characteristics and structural phenomena in an Au-Si interface

摘要

We report an abnormal current-voltage {I-V) characteristic observed on an Au-Si interface fabricated by a unique focused ion beam sputtering microdeposition method. The Au-Si interface shows neither Schottky nor ohmic behavior, but the I-V curve has a d//dKpeak at zero voltage. High-resolution transmission electron microscopy studies reveal the existence and unstable nature of an approx10 nm thick interfacial layer at the Au-Si contact. The unusual electrical behavior is likely correlated with this metastable inter-facial layer.