Temperature dependent current-voltage (I-V) characteristics of Au-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni -Doped) interfacial layer

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Temperature dependent current-voltage (I-V) characteristics of Au-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni -Doped) interfacial layer

机译：具有聚乙烯醇（Co，Ni掺杂）界面层的Au / n-Si（111）肖特基势垒二极管（SBD）的温度相关电流-电压（I-V）特性

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《Optoelectronics and Advanced Materials-Rapid Communications》 |2010年第2010期|共页
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1. Temperature dependent current-voltage (I-V) characteristics of Au-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer [J] . Tunc T, Altindal S, Uslu I, Materials science in semiconductor processing . 2011,第2期

机译：具有PVA（Ni，Zn掺杂）界面层的Au / n-Si（1 1 1）肖特基势垒二极管的温度相关电流-电压（I-V）特性
2. The effect of PVA (Bi_2O_3-doped) interfacial layer and series resistance on electrical characteristics of Au-Si (110) Schottky barrier diodes (SBDs) [J] . G?k?en M., Tun? T., Altndal ?., Current applied physics: the official journal of the Korean Physical Society . 2012,第2期

机译：PVA（Bi_2O_3掺杂）界面层和串联电阻对Au / n-Si（110）肖特基势垒二极管（SBD）的电特性的影响
3. The effect of PVA (Bi_2O_3-doped) interfacial layer and series resistance on electrical characteristics of Au-Si (110) Schottky barrier diodes (SBDs) [J] . G?k?en M., Tun? T., Altndal ?., Current applied physics: the official journal of the Korean Physical Society . 2012,第2期

机译：PVA（Bi_2O_3掺杂）界面层和串联电阻对Au / n-Si（110）肖特基势垒二极管（SBD）的电特性的影响
4. Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n-Si Schottky Barrier Diodes (SBDs) [C] . I. Tascioglu, U. Aydemir, S. Altindal, International Congress on Advances in Applied Physics and Materials Science . 2011

机译：Au /锌掺杂聚乙烯醇（PVA：Zn）/ N-Si肖特基势垒二极管（SBD）的照明依赖性耐蒸馏特性
5. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics [O] . Yue Sun, Xuanwu Kang, Yingkui Zheng, 2020

机译：通过电感耦合等离子体（ICP）和器件特性优化准垂直GaN肖特基势垒二极管（SBD）的台面蚀刻
6. The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz [O] . ELİF MARIL 2019

机译：AU / PPY / N-Si（MPS）型肖特基势垒二极管（SBD）温度依赖性反向偏置电容 - 电压（C-V）特性的研究在100 kHz和500 kHz
7. Effects of Heavy Doping on the I-V Characteristics of Schottky Barrier and P-N Junctions. [R] . sheldon,john f. 1975

机译：重掺杂对肖特基势垒和p-N结的I-V特性的影响。

Temperature dependent current-voltage (I-V) characteristics of Au-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni -Doped) interfacial layer

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