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Electrochromic Nb-doped WO_3 films: Effects of post annealing

机译:电致变色Nb掺杂WO_3薄膜:后退火的影响

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摘要

The Nb-doped WO_3 films were deposited by e-beam co-evaporation method using ceramic WO_3 targets and metal Nb slugs. The films were analyzed by glancing incident angle X-ray diffraction (GIAXRD), UV/visible spectrophotometer, electrochemical cyclic voltammetry, X-ray photoelectron spectroscopy (XPS). The as-prepared film is brown and amorphous in structure. The film has low transmission in optical visible region. The XPS results indicate that the as-deposited film is non-stoichiometric. By applying a negative potential, the as-deposited film does not show obvious electrochromic effect. However, the electrochromic properties of Nb-doped WO_3 films are improved by post annealing treatment at 350, 400, and 450 °C in oxygen atmosphere. The Nb-doped WO_3 films transform into crystalline structure and become transparent after post annealing treatment. The energy band gap, optical modulation, and color efficiency increase with annealing temperature.
机译:使用电子WO_3靶和金属Nb块通过电子束共蒸发法沉积掺Nb的WO_3薄膜。通过掠入射角X射线衍射(GIAXRD),紫外/可见分光光度计,电化学循环伏安法,X射线光电子能谱(XPS)来分析膜。所制备的膜为棕色且结构为非晶态。该膜在可见光区域具有低透射率。 XPS结果表明,所沉积的膜是非化学计量的。通过施加负电势,所沉积的膜没有显示出明显的电致变色效应。但是,通过在氧气氛中在350、400和450°C下进行后退火处理,可以改善Nb掺杂的WO_3薄膜的电致变色性能。掺Nb的WO_3薄膜在后退火处理后转变为晶体结构并变为透明。能带隙,光学调制和色效率随退火温度而增加。

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