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首页> 外文期刊>CERAMICS INTERNATIONAL >Dependence of the nonlinear electrical behavior of SnO_2-based varistors on Cr_2O_3 addition
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Dependence of the nonlinear electrical behavior of SnO_2-based varistors on Cr_2O_3 addition

机译:SnO_2基压敏电阻的非线性电学行为对Cr_2O_3添加的影响

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摘要

Tin dioxide varistors doped with CoO, ZnO, Ta_2O_5 and Cr_2O_3 were prepared by the mixed oxide method. Temperature dependent impedance spectroscopy revealed two different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O_2 species at the grain boundary interface. We show that Cr_2O_3 improves the varistor properties, generating sites for the adsorption of O' and O" at the grain boundary region. The O' and O" defects are truly responsible for the barrier formation at the grain boundary interface.
机译:采用混合氧化物法制备了掺CoO,ZnO,Ta_2O_5和Cr_2O_3的二氧化锡压敏电阻。温度相关的阻抗谱显示了两种不同的活化能,一种在低频,另一种在高频。这些活化能与晶界界面处O_2的吸附和反应有关。我们表明,Cr_2O_3改善了压敏电阻性能,在晶界区域产生了O'和O''的吸附位点。O'和O''缺陷确实是导致晶界界面形成势垒的原因。

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