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首页> 外文期刊>Journal of Materials Science >The nonlinear electrical behavior of ZnO-based varistor ceramics with CaSiO_3 addition
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The nonlinear electrical behavior of ZnO-based varistor ceramics with CaSiO_3 addition

机译:添加CaSiO_3的ZnO基压敏陶瓷的非线性电学性能。

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ZnO-based varistor ceramics with various amounts of CaSiO_3 have been prepared by the conventional solid-state reaction route, and the phase composition, microstructure and electrical properties have been investigated by XRD, SEM, a V-I source/measure unit and impedance spectroscopy (IS). The XRD analyses show the presence of primary phase ZnO and some minor secondary phases. The electrical properties analysis results show that the nonlinear coefficient of the varistor ceramics is in the range of 14.9-30.9, the breakdown voltage in the range of 57.0-168.8 V/mm, and the leakage current in the range of 1.1-31.5 μA/cm~2. A schematic model for the electrical microstructure of ZnO-based varistor ceramics is proposed with an equivalent circuit of R_a (R_gC_g)(R_(gb)C_(gb)) by IS.
机译:通过常规的固态反应路线制备了各种CaSiO_3含量的ZnO基压敏陶瓷,并通过XRD,SEM,VI源/测量单元和阻抗谱(IS)研究了相组成,微观结构和电性能。 )。 XRD分析表明存在初级相ZnO和一些次要次级相。电性能分析结果表明,压敏陶瓷的非线性系数在14.9-30.9范围内,击穿电压在57.0-168.8 V / mm范围内,漏电流在1.1-31.5μA/ A范围内。厘米〜2。利用IS提出的等效电路R_a(R_gC_g)(R_(gb)C_(gb))提出了基于ZnO的压敏电阻陶瓷微结构的电学模型。

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