Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers

摘要

The proper modelling of semiconductor device operation with full complexity of many interrelated physical phenomena taking place within its volume is possible only when the material parameters which appear in each part of the self-consistent model are known. Therefore, it is necessary to include in calculations the material composition, temperature, carrier concentration, and wavelength dependences in electrical, thermal, recombination and optical models. In this work we present a complete set of material parameters which we obtained basing mostly on the experimental data found in several dozen publications. To refine the number of equations, we restrict the material list to those which are typically used in edge-emitting lasers and vertical-cavity surface-emitting lasers designed for mid-infrared emission.