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首页> 外文期刊>CERAMICS INTERNATIONAL >Study of structural, dielectric and electrical conduction behaviour of Gd substituted CaCu_3Ti_4O_(12) ceramics
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Study of structural, dielectric and electrical conduction behaviour of Gd substituted CaCu_3Ti_4O_(12) ceramics

机译:Gd取代的CaCu_3Ti_4O_(12)陶瓷的结构,介电和导电行为的研究

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Effect of Gd on microstructural, dielectric and electrical properties has been studied over wide temperature (300-500 K) and frequency range (100 Hz-1 MHz). Gd substitution in CCTO system results in decrease in the grain size and increase of Schottky potential barrier which causes lower value of dielectric constant. The dielectric constant remains nearly constant in temperature range 300-350 K. Doped samples show lower dielectric loss in middle frequency range (~ 10 kHz-1 MHz) at room temperature. The AC conductivity (σ_(ac)) obeys a power law, σ_(ac) = Af~n, where n is temperature dependent frequency exponent. The AC conductivity behaviour can be divided into three regions depending on conduction processes and the relevant charge transport mechanisms have been discussed.
机译:在宽温度(300-500 K)和频率范围(100 Hz-1 MHz)上研究了Gd对微结构,介电和电性能的影响。 CCTO系统中的Gd替代会导致晶粒尺寸减小和肖特基势垒增加,从而导致介电常数值降低。介电常数在300-350 K的温度范围内几乎保持恒定。掺杂样品在室温下的中频范围(〜10 kHz-1 MHz)中显示出较低的介电损耗。交流电导率(σ_(ac))遵循幂定律,σ_(ac)= Af〜n,其中n是温度相关的频率指数。根据导电过程,AC导电行为可分为三个区域,并且已经讨论了相关的电荷传输机制。

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