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Pressureless sintered SiC matrix toughened by in situ synthesized TiB_2: Process conditions and fracture toughness

机译:原位合成TiB_2增韧的无压烧结SiC基体:工艺条件和断裂韧性

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摘要

This paper reports the fabrication of SiC toughened by in situ synthesized TiB_2 based on pressure-less sintering technique using TiO_2, B_4C, C and SiC as starting materials. The process conditions were investigated in detail, including the pre-sintering temperatures, carbon contents, differently sized TiO_2 powders, TiB_2 volume contents, final sintering temperature and time. These conditions were found to have great influence on the TiB_2 toughened SiC in terms of relative density, TiB_2 particle size and fracture toughness. Homogeneous dispersion of in situ synthesized TiB_2 secondary phase was confirmed to enhance the K_(IC) of the SiC matrix. The K_(IC) of SiC toughened by in situ synthesized TiB_2 (15 vol%) reaches 6.3 MPa m~(1/2), which is among the highest values reported so far on TiB_2 reinforced SiC composites based on the pressure-less sintering technique using TiO_2 as Ti source.
机译:本文报道了基于无压烧结技术,以TiO_2,B_4C,C和SiC为原料的原位合成TiB_2增韧SiC的制备方法。详细研究了工艺条件,包括预烧结温度,碳含量,不同尺寸的TiO_2粉末,TiB_2体积含量,最终烧结温度和时间。在相对密度,TiB_2粒径和断裂韧性方面,发现这些条件对TiB_2增韧的SiC有很大的影响。证实原位合成的TiB_2第二相的均相分散可增强SiC基体的K_(IC)。原位合成TiB_2(15 vol%)增韧的SiC的K_(IC)达到6.3 MPa m〜(1/2),是迄今为止基于无压烧结的TiB_2增强SiC复合材料的最高值。 TiO_2作为钛源的纳米技术

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