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首页> 外文期刊>Organometallics >Electronic structure of strained silicon- and sulfur-bridged [1]ferrocenophanes and an analogous dicarbon-bridged [2]ferrocenophane: An investigation by photoelectron spectroscopy and density-functional theory
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Electronic structure of strained silicon- and sulfur-bridged [1]ferrocenophanes and an analogous dicarbon-bridged [2]ferrocenophane: An investigation by photoelectron spectroscopy and density-functional theory

机译:应变硅桥和硫桥联的[1]二茂铁硼烷和类似的二碳桥联的[2]二茂铁硼烷的电子结构:通过光电子能谱和密度泛函理论进行研究

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摘要

He I and He II photoelectron (PE) spectra of [Fe(eta-C5H4)(2)SiMe2] (1), [Fe(eta-C5H3Me)(2)SiMe2] (2), [Fe(eta-C5H4)(eta-C5Me4)SiMe2] (3), [Fe(eta-C5Me4)(2)SiMe2] (4), [Fe(eta-C5H4)(2)C2H4] (5), and [Fe(eta-C5H4)(2)S] (6) have been measured and assigned. The d bands of 1-5 show less structure than that of ferrocene, consistent with a loss of degeneracy of the e(2) orbitals on bending. Compound 6, which has the largest inter-ring angle of the series, shows two separate d bands. The trend in the first ionization energy closely parallels the variation in oxidation potential. Density functional calculations on 1, 5, and 6 give geometries in good agreement with the structures found from X-ray diffraction. Ionization energies calculated were also in excellent agreement with experiment. Good agreement was also found between the calculated d-d transitions and the position of the first spin-allowed band in the optical spectra of 1 and 6. Estimates of strain energy in bending ferrocene and octamethylferrocene were obtained, and octamethylferrocene was shown to be significantly more difficult to bend. Compounds 1 and 6 were both shown to have a low-lying empty orbital, partially located on the ipso carbon, which is a possible site for nucleophilic attack in the polymerization process undergone by these compounds. [References: 52]
机译:[Fe(eta-C5H4)(2)SiMe2](1),[Fe(eta-C5H3Me)(2)SiMe2](2),[Fe(eta-C5H4)的He I和He II光电子(PE)光谱(eta-C5Me4)SiMe2](3),[Fe(eta-C5Me4)(2)SiMe2](4),[Fe(eta-C5H4)(2)C2H4](5)和[Fe(eta-C5H4) )(2)S](6)已被测量和分配。 1-5的d波段显示的结构比二茂铁少,这与弯曲时e(2)轨道的简并性损失相一致。具有系列最大环间角的化合物6显示两个单独的d波段。第一电离能的趋势与氧化电位的变化非常相似。在1、5和6上进行的密度泛函计算得出的几何形状与X射线衍射发现的结构非常吻合。计算出的电离能也与实验非常吻合。在1和6的光谱中,计算出的dd跃迁与第一个自旋允许带的位置之间也发现了很好的一致性。估算了弯曲二茂铁和八甲基二茂铁的应变能,并且发现八甲基二茂铁的难度更大。扭曲;破戒。化合物1和6均显示出一个低洼的空轨道,部分位于ipso碳上,这是这些化合物经历的聚合过程中亲核攻击的可能位点。 [参考:52]

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