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Spark plasma sintering of tungsten/graphite joints with a SiC ceramic interlayer

机译:钨/石墨结合SiC陶瓷中间层的火花等离子体烧结

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Tungsten powders were successfully sintered and simultaneously joined to a graphite disk using an interlayer of SiC ceramic powder, which contained Al2O3 and Y2O3 as sintering aids for the SiC. The tungsten/graphite joints were prepared at 30 MPa and temperatures ranging from 1700 degrees C to 2000 degrees C for 5 min using spark plasma sintering (SPS). The tensile strength of the joints prepared at 1700 degrees C reached 21 MPa. The suggested joining mechanism of the joints prepared below 1800 degrees C is as follows: both the sintered W metal layer and the SiC ceramic interlayer are chemically bonded together accompanying reaction phases of WC, W2C and W5Si3. A physical bond is achieved between the SiC interlayer and graphite when the SiC powder fills the open pores of the graphite and is sintered there. Although a similar joining mechanism is suggested when the joining temperature exceeds 1900 degrees C, the SiC interlayer disappears, and the broad reaction layer consisting of WC, W2C and trace W5Si3 is formed. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:钨粉已成功烧结,并同时使用一层包含Al2O3和Y2O3作为SiC烧结助剂的SiC陶瓷粉中间层连接到石墨盘上。使用火花等离子体烧结(SPS)在30 MPa和1700℃至2000℃的温度下5分钟制备钨/石墨接头。在1700摄氏度下制备的接头的拉伸强度达到21 MPa。建议在低于1800摄氏度的温度下制备的接头的连接机理如下:烧结的W金属层和SiC陶瓷中间层都化学结合在一起,伴随着WC,W2C和W5Si3的反应阶段。当SiC粉填充石墨的开孔并在那里烧结时,在SiC中间层和石墨之间实现了物理结合。尽管当接合温度超过1900℃时提出了类似的接合机理,但是SiC夹层消失,并且形成了由WC,W2C和痕量W5Si3组成的宽反应层。 (C)2014 Elsevier Ltd和Techna Group S.r.l.版权所有。

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