Optical Echelette on a Vicinal Facet of Semi-Insulating GaAs(Cr)

V. I. Kadushkin; E. L. Shangina

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Optical Echelette on a Vicinal Facet of Semi-Insulating GaAs(Cr)

机译：半绝缘GaAs（Cr）邻面的光学小阶梯光栅

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摘要

A diffraction grating with an asymmetric triangular profile having a period of 6 μm is formed on a vicinal facet of a semi-insulating GaAs plate by chemical etching. The transmission spectrum of the grating is studied.

机译：通过化学蚀刻，在半绝缘GaAs板的邻接面上形成周期为6μm的不对称三角形的衍射光栅。研究了光栅的透射光谱。

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《Optics and Spectroscopy 》 |1998年第1期| 共3页
作者
V. I. Kadushkin; E. L. Shangina;
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正文语种 eng
中图分类光学 ;
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专利

1. Optical Echelette on a Vicinal Facet of Semi-Insulating GaAs(Cr) [J] . V. I. Kadushkin, E. L. Shangina Optics and Spectroscopy . 1998 ,第1期

机译：半绝缘GaAs（Cr）邻面的光学小阶梯光栅
2. Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures [J] . Miskiewicz Eliza, Ziolkowski Andrzej, Wichtowski Marek, Optical Materials . 2019 ,第Mara期

机译：半绝缘GaAs / Algaas多量子阱结构的电光特性的热诱导变化
3. Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton-polariton and Bragg resonance [J] . V. V. Chaldyshev, A. S. Shkolnik, V. P. Evtikhiev, Journal of materials science . 2008 ,第8a9期

机译：半绝缘GaAs / AlGaAs多量子阱系统在双激子极化和布拉格共振附近的光谱
4. Fabrication and characterization of periodic nano-faceting structures on patterned vicinal(110) GaAs substrates by MOVPE [C] . T. Harada, Y. Oda, J. Motohisa, International Microprocesses and Nanotechnology Conference . 2000

机译：MOVPE上图案纳米型（110）GaAs基板上的周期纳米刻面结构的制造与表征
5. Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions. [D] . Karow, Matthias. 2014

机译：InGaAs / GaAs多量子阱中的缺陷产生：晶体和光学特性与外延生长条件的相关性。
6. Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates [O] . Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, -1

机译：GaAs（111）A衬底上通过液滴外延在量子点成核中的温度激活尺寸交叉
7. Erratum: “Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B GaAs” J. Appl. Phys. 120, 134309 (2016) [O] . Takuya Kawazu 2017

机译：错误：“indaas量子丝阵列上的”光学各向异性在vicinal（111）baaas“J。苹果。物理。 120,134309（2016）
8. Simulation Studies of Persistent Photoconductivity, Filamentary Conduction and Optical Pulse Positioning on the High Voltage Response of Semi-Insulating GaAs Photoconductive Switches. [R] . Joshi, R. P., Kayasit, P., Islam, N., 1999

机译：半导体Gaas光电导开关的高电压响应持续光电导，丝传导和光脉冲定位的仿真研究。

Optical Echelette on a Vicinal Facet of Semi-Insulating GaAs(Cr)

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