Intensity of visible and IR emission of intracenter 4f transitions of RE ions in Er- and Tm-doped ZnO films with additional Ag, Li, and N impurities

摘要

The use of Ag impurity in Er-doped ZnO films deposited by AC magnetron sputtering with a low growth rate has increased the emission intensity at lambda = 1535-1540 nm. An increase in the deposition rate and in the temperature of substrates, as well as the use of Li and N+ impurities, led to a considerable increase in the intensity of the line with lambda = 376-379 nm in the case of doping with rare-earth ions (Er, Tm), which makes it possible to use this semiconductor for creation of devices for the short-wavelength spectral region. Introduction of additional impurities in Er-doped ZnO films deposited on bulk ZnO crystals with increasing deposition rate and temperature caused an increase in the intensity of the line with lambda = 1535-1540 nm. The photoluminescence spectra of ZnO films doped with Tm (ZnO < Tm >) exhibited intense emission of lines with lambda(max) = 377 nm.