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Raman scattering in lead selenide films at a low excitation level

机译:低激发水平硒化铅薄膜中的拉曼散射

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Raman scattering spectra of epitaxial lead selenide films were measured at low (0.06 mW/mu m(2)) excitation power densities to ensure the absence of photo- and thermal modifications of the film material. It is shown that observed transitions correspond to overtones or combinational tones of PbSe phonon modes implying a high quality of crystalline structure of the material for which the first order Raman effect is prohibited. An increase in incident excitation density leads to the appearance of transitions related to lead oxides, which masks characteristic spectral features of lead selenide.
机译:在低(0.06 mW /μm(2))激发功率密度下测量外延硒化铅薄膜的拉曼散射光谱,以确保没有光和热改性的薄膜材料。结果表明,观察到的跃迁对应于PbSe声子模的泛音或组合音,这意味着材料的晶体结构的高质量被禁止了一级拉曼效应。入射激发密度的增加导致出现与氧化铅有关的跃迁,从而掩盖了硒化铅的特征光谱特征。

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