Effect of UV radiation surface damage on silicon position sensitive photodetector

摘要

As a result of the ever increasing energetic UV radiation doses and the need for more radiation hard devices, damage and degradation testing of optical sensors have become very imperative. In this report, results describing the effect of prolonged UV beam irradiation on the performance of a p(+)n duo-lateral position sensitive detector (IPSD) are reported. The results include the use of a simple method to visualize in 3-dimensional graphs, the effect of radiation damage on the lPSD sensitivity and position detection deviation over the entire active area. The results also show that the ionization damage effects at the Silicon-Silicon oxide interface result in decrease in sensitivity, increase in position detection deviation, and increase in leakage and shot noise current. (C) 2015 Published by Elsevier GmbH.