Low temperature nanocrystalline silicon nitride film grown on silicon (111) by radio frequency sputtering system

摘要

Nanocrystalline antireflective silicon nitride (Si3N4: 75 nm) film was deposited on a silicon P (1 1 1) substrate by a radio frequency sputtering system. The film was prepared in reactive nitrogen-argon (N-2-Ar) atmospheres with substrate heating at 200 degrees C. The average crystallite size was 1.06 nm for the Si3N4 film. The RMS roughness was found to be 0.62 nm, the results revealed fine nanocrystallites of Si3N4 film. Optical reflectivity measurements through Filmetrics at lambda = 525 nm showed the minimum reflectivity (400-1000 nm) R = 1.30%. The X-ray diffraction data exhibited seven predominant peaks along (2 0 0), (1 0 1),(1 1 1).(3 0 1), (3 2 0), (1 0 2) and (3 0 2) for Si3N4 nanocrystalline film while one peak at 2 theta = 28.32 degrees was due to P(1 1 1) layer. (C) 2015 Elsevier GmbH. All rights reserved.