Simulation analysis of the aluminum thin film thickness measurement by using low energy electron beam

摘要

This paper indicates a simulation analysis for estimating the aluminum (Al) thin film thickness measurements by using the low energy electron beam. In order to calculate the Al thickness estimation, the energy of the incident electron beams was varied from 10 to 30 keV, while the thickness of the Al film was varied between 6 and 14 μm. From the simulation results it was found that electron transmittance fraction in 14 μm sample is about nine orders of magnitude more than 6 μm sample at the same incident electron beam energy. Simulation results show that maximum transmitted electrons versus Al layer thickness has a parabolic relation and by using the obtained equation, it is possible to estimate unknown thickness of the thin film Al layer. All calculations here were done by CASINO numerical simulation package.